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1N6081US

Features: ·Popular 1N6073US to 1N6081US series ·Voidless hermetically-sealed glass package ·Extremely robust construction ·Triple-layer passivation ·Internal Category Metallurgical bonds ·Options for screening in accordance with MIL-PRF-19500/503 for JAN, JANTX, JANTXV, or JANS by using a MQ, MX...

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SeekIC No. : 004213692 Detail

1N6081US: Features: ·Popular 1N6073US to 1N6081US series ·Voidless hermetically-sealed glass package ·Extremely robust construction ·Triple-layer passivation ·Internal Category Metallurgical bonds ·Options ...

1N6081US Data Sheet

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Part Number:
1N6081US
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Description



Features:

·Popular 1N6073US to 1N6081US series 
·Voidless hermetically-sealed glass package 
·Extremely robust construction 
·Triple-layer passivation 
·Internal "Category" Metallurgical bonds 
·Options for screening in accordance with MIL-PRF-19500/503 for JAN, JANTX, JANTXV, or JANS by using a MQ, MX, MV or MSP prefix respectively , e.g. MX6076, MV6079, MSP6081, etc.     
·Axial-leaded equivalents also available (see separate data sheet for 1N6073 thru 1N6081) 


Application

·Ultrafast recovery rectifier series 50 to 150 V 
·Military and other high-reliability applications 
·Switching power supplies or other applications requiring extremely fast switching & low forward loss 
·High forward surge current capability 
·Low thermal resistance for higher power 
·Controlled avalanche with peak reverse power capability 
·Inherently radiation hard  as described in Microsemi MicroNote 050


Specifications

` Junction Temperature:  -65 to +155 
` Storage Temperature:  -65 to +155 
` Peak Forward Surge Current @ 25:  35 Amps for N6073US-6075US, 75 Amps for 1N6076US-6078US, and 175 Amps for 1N6079US-6081US at 8.3 ms half-sine wave
` Average Rectified Forward Current (IO) at TEC = +70 :  
1N6073US thru 1N6075US:   3.0 Amps 
1N6076US thru 1N6078US:   6.0 Amps 
1N6079US thru 1N6081US:   12.0 Amps
` Average Rectified Forward Current (IO) at TA=55:
1N6073US thru 1N6075US:   0.85 Amps 
1N6076US thru 1N6078US:   1.3 Amps 
1N6079US thru 1N6081US:   2.0 Amps        
`Thermal Resistance (RJEC):  13/W for 1N6073US-6075US, 8.5/W for 1N6076US-6078US, and 5.0/W for 1N6079US-6081US   
` Solder temperature:  260 for 10 s (maximum)


Description

This "Ultrafast Recovery" rectifier diode of the 1N6081US series is ideal for high-reliabilit applications where a failure cannot be tolerated.  These 3, 6, and 12 Amp rated rectifiers (TEC =70) in different package sizes with working peak reverse
voltages from 50 to 150 volts are hermetically sealed using voidless-glass construction and an internal "Category I" metallurgical bond.  The 1N6081US is also available in axial-lead package configurations for through-hole mounting by deleting the "US" suffix (see separate data sheet for 1N6073 thru 1N6081).  Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.




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