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1N5770

Features: · HERMETIC CERAMIC PACKAGE· Bv > 60V at 10uA· Ir < 100nA at 40V· C < 8.0 pFSpecifications Symbol Parameter Limit Unit VBR(R) *1 *2 Reverse Breakdown Voltage 60 Vdc IO *1 * 3 Continuous Forward Current 300 mAdc IFSM *1 Peak Surge Current (tp= 1/120 s) 5...

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SeekIC No. : 004213469 Detail

1N5770: Features: · HERMETIC CERAMIC PACKAGE· Bv > 60V at 10uA· Ir < 100nA at 40V· C < 8.0 pFSpecifications Symbol Parameter Limit Unit VBR(R) *1 *2 Reverse Breakdown Voltage 60 Vdc...

1N5770 Data Sheet

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Part Number:
1N5770
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

· HERMETIC CERAMIC PACKAGE
· Bv > 60V at 10uA
· Ir < 100nA at 40V
· C < 8.0 pF


Specifications

Symbol Parameter Limit Unit
VBR(R) *1 *2 Reverse Breakdown Voltage 60 Vdc
IO *1 * 3 Continuous Forward Current 300 mAdc
IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc
PT1 *4 Power Dissipation per Junction @ 25 °C 400 mW
PT2 *4 Power Dissipation per Package @ 25 °C 500 mW
Top Operating Junction Temperature Range -65 to +150 °C
Tstg Storage Temperature Range -65 to +200 °C
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 ° C
NOTE 4: Derate at 4.0mW/°C above +25 ° C


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