1N5768

      The 1N5768 is a kind of monoithic air isolated diode array. it has 4 features: 1.HERMETIC CERAMIC PACKAGE; 2.Ir < 100nA at 40V; 3.Bv > 60V at 10uA; 4.C < 4.0 pF.
      The 1N5768's Absolute Maximum Ratings:1. Reverse Breakdown Voltage(VBR) is 60 Vdc; 2.Continuous Forward Current(IO) is 300 mAdc; 3.Peak Surge Current (tp= 1/120 s)(IFSM) is 500 mAdc; 4.Power Dissipation per Junction @ 25°C(PT1) is 400 mW; 5.Power Dissipation per Package @ 25°C(PT2) is 500 mW; 6.Operating Junction Temperature Range(Top) is from -65 to +150 °C; 7.Storage Temperature Range(Tstg) is from -65 to +200 °C. there are 4 notes here: 1.Each Diode; 2.Pulsed: PW = 100ms max.; duty cycle < 20%; 3.Derate at 2.4mA/°C above +25 °C; 4.Derate at 4.0mW/°C above +25 °C.
      When 25°C unless otherwise specified, the Electrical Characteristics (Per Diode) of the 1N5768 are: 1.when If = 100mAdc, Forward Voltage is 1 Vdc; 2. If = 500mAdc, Forward Voltage is 1.5 Vdc; 3. when VR = 40 Vdc, Reverse Current is 0.1 uAdc; 4. when VR = 0 Vdc ; f = 1 MHz, Capacitance is 4.0 pF; 5. when If = 500mAdc, Forward Recovery Time is 40ns; 6.when If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms, Reverse Recovery Time is 20ns.
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