1N5712

Schottky (Diodes & Rectifiers) 20 VBR 1.2 pF

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SeekIC No. : 00193895 Detail

1N5712: Schottky (Diodes & Rectifiers) 20 VBR 1.2 pF

floor Price/Ceiling Price

Part Number:
1N5712
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Product : Schottky Diodes Peak Reverse Voltage : 20 V
Forward Continuous Current : 0.035 A Configuration : Single
Forward Voltage Drop : 0.41 V at 0.001 A Maximum Reverse Leakage Current : 0.15 uA at 16 V
Maximum Power Dissipation : 250 mW Operating Temperature Range : - 65 C to + 200 C
Mounting Style : SMD/SMT Package / Case : Case 15
Packaging : Bulk    

Description

Max Surge Current :
Recovery Time :
Configuration : Single
Mounting Style : SMD/SMT
Product : Schottky Diodes
Peak Reverse Voltage : 20 V
Packaging : Bulk
Forward Voltage Drop : 0.41 V at 0.001 A
Maximum Power Dissipation : 250 mW
Operating Temperature Range : - 65 C to + 200 C
Package / Case : Case 15
Forward Continuous Current : 0.035 A
Maximum Reverse Leakage Current : 0.15 uA at 16 V


Features:

• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available



Specifications

Junction Operating and Storage Temperature Range
        5082-2303, -2900 .................................................. -60°C to +100°C
        1N5711, 1N5712, 5082-2800/10/11 ...................... -65°C to +200°C
        5082-2835 ............................................................. -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at TCASE = 25°C)
Derate linearly to zero at maximum rated temperature
        5082-2303, -2900 ................................................................... 100 mW
        1N5711, 1N5712, 5082-2800/10/11 ........................................ 250 mW
        5082-2835 ................................................................................ 150 mW
Peak Inverse Voltage .............................................................................. VBR



Description

The 1N5712 are passivated Schottky barrier diodes which use a patented "guard ring" design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing,switching, gating, log or A-D converting, video detecting,frequency discriminating,sampling, and wave shaping.

The 1N5712 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace.

The 1N5712 devices are unpassivated Schottky diodes in a glass package. These diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers.




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