Features: • Surface mount package series equivalent to the JEDEC registered 1N5615 to 1N5623 series• Voidless hermetically sealed glass package• Triple-Layer Passivation• Internal Category I Metallurgical bonds• Working Peak Reverse Voltage 200 to 1000 Volts.•...
1N5623US: Features: • Surface mount package series equivalent to the JEDEC registered 1N5615 to 1N5623 series• Voidless hermetically sealed glass package• Triple-Layer Passivation• Int...
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• Junction & Storage Temperature: -65 to +175
• Thermal Resistance: 7 /W junction to end cap
• Thermal Impedance: 4.5 /W @ 10 ms heating time
• Average Rectified Forward Current (IO): 1.0 Amps @TA = 55
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260 for 10 s (maximum)
This "fast recovery" surface mount rectifier diode series of the 1N5623US is military qualified to MILPRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. The 1N5623US is also available in axial-leaded package configurations for thru-hole mounting (see separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.