1N5615US

• Junction & Storage Temperature: -65 to +175
• Thermal Resistance: 7 /W junction to end cap
• Thermal Impedance: 4.5 /W @ 10 ms heating time
• Average Rectified Forward Current (IO): 1.0 Amps @TA = 55
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260  for 10 s (maximum)

This "fast recovery" surface mount rectifier diode series is military qualified to 1N5615US and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. 1N5615US is also available in axial-leaded package configurations for thru-hole mounting (see separate data sheet for 1N5615US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.