1N5283through1N5314

      1N5283 through 1N5314 may be used in parallel to obtain higher currents, which are especially designed for maximum impedance over the operating range. Field-effect current regulator diodes are akind of circuit elements which also provide a current essentially independent of voltage.
      The manufacturing locations of 1N5283 through 1N5314 is Phoenix, Arizona(WAFER FAB, ASSEMBLY/TEST). there are some parameters should be considered.  Peak Operating Voltage(T_J =55°C to +200°C), POV = 100 Volts; Steady State Power Dissipation @ T_L = 75°C Derate above T_L = 75°C Lead Length = 3/8(Forward or Reverse Bias), P_D= 600 mW or 4.8 mW/°C; Operating and Storage Junction Temperature Range, T_J/Tstg= 55 to +200 °C.
      Some application notes of 1N5283 through 1N5314 have to think about. As the current available from the diode is temperature dependent, it is necessary to determine junction temperature, T_J, under specific operating conditions to calculate the value of the diode current. The following procedure is recommended: Lead Temperature, TL, shall be determined from: TL = _LA P_D + T_A Junction Temperature, T_J, shall be calculated from: T_J = T_L + _JL P_D