Features: ·These diodes are also available in other case styles including the DO35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation IMBD4448-V·Silicon Epitaxial Planar Diode·Fast switching diodes· Lead (Pb)-free...
1N4448WS-V: Features: ·These diodes are also available in other case styles including the DO35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT23 case with ...
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·These diodes are also available in other case styles including the DO35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation IMBD4448-V
·Silicon Epitaxial Planar Diode
·Fast switching diodes
· Lead (Pb)-free component
·Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Parameter |
Test condition |
Symbol |
Value |
Unit |
Reverse voltage |
VR |
75 |
V | |
Peak reverse voltage |
VRM |
100 |
V | |
Average rectified current half wave rectification with resistive load |
f 50 Hz |
IF(AV) |
1501) |
mA |
Surge forward current | t < 1 s and Tj = 25 |
IFSM |
350 |
mA |
Power dissipation |
Ptot |
2001) |
mW |