1N415E

      The ASI 1N415E is a kind of silicon mixer diode(PACKAGE  STYLE  DO- 23), which is designed for applications operating From 8.0 to 12.4 GHz. It is excellent of its high burnout resistance, low noise figure and hermetically sealed package.The highest ratings and parameters of 1N415E were tested out at 25. IF=20 mA, PDISS=2.0 (ERGS) (TC = 25 °C), TJ=-55 °C to +150 °C, TSTG=-55 °C to +150 °C, and VSWR(MAXIM)=1.3, ZIF(RL = 22 Ω, f  = 1000 Hz )=335Ω(MINIMUM) / 465Ω(MAXIM), frange = 8.0GHz (MINIMUM) / 12.4GH (MAXIM), NF (F = 9375 MHz, Plo = 1.0 mW, NFif = 1.5 dB, RL = 100 Ω, IF = 30 MHz)=7.5dB (MAXIM)
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