1N4151W-V

1N4151W-V is a kind of small signal fast switching diode, which posseses many excellent properties. It is kind of fast switching diode, lead (Pb)-free component, silicon epitaxial planar diode, component in accordance to RoHS 2002/95/EC and WEEE 2002/9, and this diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type designation LL4151.
The code of 1N4151W-V(Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box) is 1N4151W-V-GS18 or 1N4151W-V-GS08.
Maximun parameters of 1N4151W-V are getten at Tamb=25°C. TJ(Junction temperature)=150°C, Ts(Storage Temperature range)= -65 to +150 , Ptot(Power Dissipation)=450m W(Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature), VF(Forward Voltage at IF = 50 mA)=1.0V, RthA(Thermal Resistance Junction to Ambient Air )=450 K/W(Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature), VR(Reverse voltage)=50V, IF(AV) ( Average rectified current half wave rectification with resistive load, Tamb = 25 °C and f 50 Hz)=150mA (Valid provided that electrodes are kept at ambient temperature), IFSM(Surge current, t < 1 s and TJ= 25 °C)=500mA, VF(Forward voltage, IF = 50 mA)1.0V, IR(Leakage current, VR = 50 V or VR = 20 V, TJ= 150 °C)=50nA/µA, (Rectification efficiency, f = 100 MHz, VRF = 2 V)=0.45, trr(Reverse recovery time, IF = 10 mA to IR = 10 mA to IR = 1 mA or IF = 10 mA to IR = 1 mA, V = 6 V, R = 100 Ω)=4/2 ns.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer.