1N4151

Rectifiers High Conductance Ultra Fast

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1N4151 Picture
SeekIC No. : 00178205 Detail

1N4151: Rectifiers High Conductance Ultra Fast

floor Price/Ceiling Price

Part Number:
1N4151
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Product : Ultra Fast Recovery Rectifiers Configuration : Single
Reverse Voltage : 75 V Forward Voltage Drop : 1 V at 0.5 A
Recovery Time : 4 ns Forward Continuous Current : 0.15 A
Max Surge Current : 2 A Reverse Current IR : 0.05 uA
Mounting Style : Through Hole Package / Case : DO-35
Packaging : Bulk    

Description

Product : Ultra Fast Recovery Rectifiers
Packaging : Bulk
Configuration : Single
Mounting Style : Through Hole
Recovery Time : 4 ns
Max Surge Current : 2 A
Reverse Current IR : 0.05 uA
Package / Case : DO-35
Reverse Voltage : 75 V
Forward Continuous Current : 0.15 A
Forward Voltage Drop : 1 V at 0.5 A


Application

Extreme fast switches




Specifications

Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage VRRM 75 V
Reverse voltage VR 50 V
Peak forward surge current IFSM 2 A
Repetitive peak forward current IFRM 500 mA
Forward current IF 300 mA
Average forward current VR=0 IFAV 150 mA
Power dissipation l=4mm, TL=45 PV 440 mW
l=4mm, TL=25 PV 500 mW
Junction temperature Tj 175
Storage temperature range Tstg 65...+175





Description

The 1N4151 is designed as one kind of silicon epitaxial planar diode that can be used in extreme fast switches applications. The absolute maximum ratings of the 1N4151 can be summarized as:(1)Repetitive peak reverse voltage: 75 V;(2)Reverse voltage: 50 V;(3)Peak forward surge current: 2 A;(4)Repetitive peak forward current: 500 mA;(5)Forward current: 300 mA;(6)Average forward current: 150 mA;(7)Power dissipation l=4mm, TL=45: 440 mW;(8)Power dissipation l=4mm, TL</=25: 500 mW;(9)Junction temperature: 175 ;(10)Storage temperature range: -65 to +175 .

The electrical characteristics of 1N4151 can be summarized as:(1)Forward voltage: 0.88 to 1 V;(2)Reverse current VR=50V: 14 to 50 uA;(3)Reverse current VR=50V, Tj=150 : 50 uA;(4)Breakdown voltage: 75 V;(5)Diode capacity: 2 pF;(6)Reverse recovery time IF=IR=10mA, iR=1mA: 4 ns. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.






Parameters:

Technical/Catalog Information1N4151
VendorFairchild Optoelectronics Group
CategoryDiscrete Semiconductor Products
Diode Type Standard
Voltage - DC Reverse (Vr) (Max)75V
Current - Average Rectified (Io)150mA
Voltage - Forward (Vf) (Max) @ If1V @ 50mA
Reverse Recovery Time (trr)4ns
Current - Reverse Leakage @ Vr50nA @ 50V
SpeedSmall Signal =< 200mA (Io), Any Speed
Mounting TypeThrough Hole, Axial
Package / CaseDO-35, Axial
PackagingBulk
Capacitance @ Vr, F2pF @ 0V, 1MHz
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 1N4151
1N4151



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