1N4150

Configuration :
Product : Switching Diodes
Max Surge Current : 4 A
Forward Voltage Drop : 1 V
Maximum Reverse Leakage Current : 0.1 uA
Peak Reverse Voltage : 50 V
Forward Continuous Current : 0.2 A
Maximum Power Dissipation : 0.5 W
Recovery Time : 6 ns
Package / Case : DO-35
Operating Temperature Range : - 65 C to + 200 C
Packaging : Box


Specifications

Symbol	Parameter	Value	Units
WIV	Working Inverse Voltage	50	V
IO	Average Rectified Current	200	mA
IF	DC Forward Current	400	mA
if	Recurrent Peak Forward Current	600	mA
if(surge)	Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond	1.0 4.0	A A
Tstg	Storage Temperature Range	-65 to +200	°C
TJ	Operating Junction Temperature	175	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Parameters:

Technical/Catalog Information	1N4150
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	50V
Current - Average Rectified (Io)	200mA
Voltage - Forward (Vf) (Max) @ If	1V @ 200mA
Reverse Recovery Time (trr)	4ns
Current - Reverse Leakage @ Vr	100nA @ 50V
Speed	Small Signal =< 200mA (Io), Any Speed
Mounting Type	Through Hole, Axial
Package / Case	DO-35, Axial
Packaging	Bulk
Capacitance @ Vr, F	2.5pF @ 0V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	1N4150 1N4150