1N4006G, US $ .04-.13 , ON Semiconductor, 1N4006G DataSheet download, circuit diagram from SeekIC.com

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1N4006G: Rectifiers 800V 1A Standard

1N4006G Data Sheet

US $ .04~.13 / Piece | Get Latest Price

Part Number:: 1N4006G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Product :	Standard Recovery Rectifiers	Configuration :	Single
Reverse Voltage :	800 V	Forward Voltage Drop :	1.1 V
Forward Continuous Current :	1 A	Max Surge Current :	30 A
Reverse Current IR :	10 uA	Mounting Style :	Through Hole
Package / Case :	DO-41	Packaging :	Bulk

Description

Recovery Time :
Forward Voltage Drop : 1.1 V
Packaging : Bulk
Forward Continuous Current : 1 A
Max Surge Current : 30 A
Configuration : Single
Product : Standard Recovery Rectifiers
Reverse Voltage : 800 V
Mounting Style : Through Hole
Package / Case : DO-41
Reverse Current IR : 10 uA

Features:

Plastic package has Underwriters Laboratory Flammability Classification 94V-0
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of MIL-S-19500
1.0 ampere operation at TA=75 with no thermal runaway
Typical IR less than 0.1 A
High temperature soldering guaranteed: 350 /10 seconds, 0.375î (9.5mm) lead length, 5 lbs. (2.3Kg) tension

Specifications

	Symbols	1N 4001G	1N 4002G	1N 4003G	1N 4004G	1N 4005G	1N 4006G	1N 4007G	BY 133G	Units
Maximum repetitive peak reverse voltage	V_RRM	50	100	200	400	600	800	1000	1300	Volts
Maximum RMS voltage	V_RMS	35	70	140	280	420	560	700	910	Volts
Maximum DC blocking voltage	V_DC	50	100	200	400	600	800	1000	1300	Volts
Maximum average forward rectified current 0.375" (9.5_^mm) lead length at T_A=75	I_(AV)	1.0								Amp
Peak forward surge current 8.3mS single half sine-wave superimposed on rated load (MIL-STD-750D 4066 method)	I_FSM	30.0								Amps
Maximum instantaneous forward voltage at 1.0A	V_F	1.1								Volts
Maximum DC reverse current T_A=25 at rated DC blocking voltage T_A=125	I_R	5.0 50.0								A
Typical reverse recovery time (Note 1)	T_rr	2.0								S
Typical junction capacitance (Note 2)	C_J	8.0								F
Typical thermal resistance (Note 3)	R _JA R_JL	55.0 25.0								/F
Operating junction and storage temperature range	T_J, T_STG	-65 to +175

Part Number	1N4006G
Total Capacitance C_T (pF)	8
Max Average Rectified Current I_O (A)	1
Peak Repetitive Reverse Voltage V_RRM (V)	800
Peak Forward Surge Current I_FSM (A)	30
Forward Voltage Drop V_F (V)	1
Max Reverse Current I_R (µA)	5

Parameters:

Technical/Catalog Information	1N4006G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	800V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	10A @ 800V
Speed	Standard Recovery >500ns, > 200mA (Io)
Mounting Type	Through Hole, Axial
Package / Case	DO-41, Axial
Packaging	Bulk
Capacitance @ Vr, F	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	1N4006G 1N4006G 1N4006GOS ND 1N4006GOSND 1N4006GOS

1N4006G

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