Specifications Items Symbols Conditions Maximum Ratings Units Gate-Emitter voltage VCES ±20 V Collector-Emitter voltage VGES 1200 V Collector current Ic Continuous Tc=25°C 1200 A Tc=80°C 800 Icp 1ms Tc=25°C 2400 Tc=80°C 1600 -Ic 1ms ...
1MBI800UB-120: Specifications Items Symbols Conditions Maximum Ratings Units Gate-Emitter voltage VCES ±20 V Collector-Emitter voltage VGES 1200 V Collector current Ic Continuous T...
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Features: • NPT-Technology• Square SC SOA at 10 x IC• High Short Circuit Withsta...
DescriptionThe 1MBI1200UC-170 is a type of IGBT module. The absolute maximum ratings(Tc= 25°C) an...
Features: • Square RBSOA• Low Saturation Voltage• Overcurrent Limiting Function ...
Items | Symbols | Conditions | Maximum Ratings | Units | ||
Gate-Emitter voltage | VCES | ±20 | V | |||
Collector-Emitter voltage | VGES | 1200 | V | |||
Collector current | Ic | Continuous | Tc=25°C | 1200 | A | |
Tc=80°C | 800 | |||||
Icp | 1ms | Tc=25°C | 2400 | |||
Tc=80°C | 1600 | |||||
-Ic | ||||||
1ms | ||||||
Collector Power Dissipation | Pc | 1 device | 4805 | W | ||
Junction temperature | Tj | 150 | °C | |||
Storage temperature | Tstg | -40 ~ +125 | ||||
Isolation voltage | between terminal and copper base *1 | Viso | AC : 1min. | 2500 | VAC | |
Screw Torque | Mounting *2 | 4.5 | N m | |||
Terminals *2 | 11.0 | |||||
Terminals *2 | 1.7 |