1MBI3600UD-170

Features: SpecificationsDescription 1MBI3600UD-170 is an excellent product which will do attract you after readingthis general introduction. Firstly , there are some absolute maximum ratings of the 1MBI3600UD-170which is at Tc= 25°C unless otherwise specified. Collector-Emitter voltage(VCES) is 17...

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SeekIC No. : 004212556 Detail

1MBI3600UD-170: Features: SpecificationsDescription 1MBI3600UD-170 is an excellent product which will do attract you after readingthis general introduction. Firstly , there are some absolute maximum ratings of the ...

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Part Number:
1MBI3600UD-170
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
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Upload time: 2024/12/21

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Description



Features:






Specifications






Description

      1MBI3600UD-170 is an excellent product which will do attract you after readingthis general introduction. Firstly , there are some absolute maximum ratings of the 1MBI3600UD-170 which is at Tc= 25°C unless otherwise specified. Collector-Emitter voltage(VCES) is 1700 V. Gate-emitter voltage(VGES) is ±20 V. Collector power dissipation(Pc) is 14480 W. Junction temperature(Tj) is 150. Storage temperature (Tstg) is from -40 to +125. Isolation voltage between terminal and copper base *1 (Vsio) is 3400 VAC when the AC is 1 mimute. Secondly, there are some electrical characteristics which is under the condition that when Tj is 25°C unless otherwise specified about it. Zero gate voltage collector current (ICES) is 1.0 mA max  when the VGE is 0 V and VCE is 1700 V. Gate-emitter leakage current (IGES) is 4800 nA under the condition that VCE is 0 V and VGE is ±20 V. Input capcacitance (Cies) is 360 nF typ when the VCE is 10 V , VGE is 0 V and f is 1 MHz. Turn-on (ton) is 1.10 s and Turn-on (tr) is 0.65 s when Vcc is 900 V , Ic is 3600 A, VGE is ±15V,Tj is 125°C, Rgon is 0.1 , Rgoff is 0.2 . Turn-off (toff) is 1.50s and turn-off(tf) is 0.40 s when Vcc is 900 V , Ic is 3600 A, VGE is ±15V,Tj is 125°C, Rgon is 0.1 , Rgoff is 0.2 . Reverse recovery (trr) is 0.45 s when the IF is 3600 A. Lead resistance (temminal-chip) (R lead) is 0.093 m. Thermal resistance characteristics (Rth(j-c)) is 0.0084 °C/W under the condition of IGBT and is 0.014°C/W under the condition of FWD. Contact Thermal resistance(1device)(Rth(c-f)) is 0.004°C/W with thermal compound (*).
      Then, there are some notes on storage and transpiration. The first one is that the module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% . The second one is storing modules in a place with few temperature changes in order to avoid condensation on the module surface. The third one is avoidng exposure to corrosive gases and dust.The forth one is avoiding excessive external force on the module. The fifth one is storing modules with unprocessed terminals. The sixth one is that please do not drop or otherwise shock the modules when transporting.
       Well, this is a simple introduction of the 1MBI3600UD-170 and if you are interested in 1MBI3600UD-170 and want to know more about 1MBI3600UD-170 , please  go to our web where you will find more detailed information aboutit , thanks for being concern of our information !

 






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