Features: • Square RBSOA• Low Saturation Voltage• Overcurrent Limiting Function (~3 Times Rated Current)Specifications Items Symbols Ratings Units Collector-Emitter Voltage VCES 600 V Gate -Emitter Voltage VGES ± 20 V CollectorCurrent Continuous IC 200 ...
1MBI200NH-060: Features: • Square RBSOA• Low Saturation Voltage• Overcurrent Limiting Function (~3 Times Rated Current)Specifications Items Symbols Ratings Units Collector-Emitter Volt...
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Features: • NPT-Technology• Square SC SOA at 10 x IC• High Short Circuit Withsta...
DescriptionThe 1MBI1200UC-170 is a type of IGBT module. The absolute maximum ratings(Tc= 25°C) an...
Features: • Square RBSOA• Low Saturation Voltage• Overcurrent Limiting Function ...
Items | Symbols | Ratings | Units | |
Collector-Emitter Voltage | VCES | 600 | V | |
Gate -Emitter Voltage | VGES | ± 20 | V | |
Collector Current |
Continuous | IC | 200 | A |
1ms | IC PULSE | 400 | ||
Continuous | -IC | 200 | ||
1ms | -IC PULSE | 400 | ||
Max. Power Dissipation | PC | 780 | W | |
Operating Temperature | Tj | +150 | °C | |
Storage Temperature | Tstg | -40 ~ +125 | °C | |
Isolation Voltage | A.C. 1min. | Vis | 2500 | V |
Screw Torque | Mounting *1 | 3.5 | Nm | |
Terminals *1 | 3.5 |
The 1MBI200NH-060 is a type of IGBT-chopper,features of the 1MBI200NH-060 are:(1)square RBSOA;(2)low satura tion voltage;(3)overcurrentlimiting function (~3 times rated current).
The absolute maximum ratings and electrical characteristics(Tj=25°C) of the 1MBI200NH-060 can be summarized as:(1):collector-emitter voltage is 600 V;(2):gate -emitter voltage is ±20 V;(3):continuous(continuous is200A,continuo us(1ms) is 400A;(4):max. power dissipation is 780 W; (5):operating temperature is +150°C;(6):s torage temperat ure is-40 °C+125°C;(7):isolation voltage(AC 1min) is 2500 V;(8).Electrical characteristics:(1):zero gate voltage colle ctor current is 2.0mA mac when VGE is 0V and VCE is 600V;(2):gate-emitter leackage current is 30 uA max when VCE is 0V and VGE is± 20V;(3):collector-emitter saturation voltage is 2.8V max when VGE is 15V and IC is 200A;(4):diode forward on-voltage is 3.0 V when IF is 200A and VGE is 0V;(5): reverse recovery time is 300 ns when IF is 200A ;(6)reverse currrent is 2.0 mA when VR is 600V.etc.
All in all, this is a simple introduction of the device,If you are in terested in 1MBI200NH-060,please pay more attention to our web!