DescriptionThe 1MBI200F-120 is a type of IGBT module(F series),features of the 1MBI200F-120 are:(1)variety of power capacity series;(2)low saturation voltage;(3)voltage drive. The absolute maximum ratings and electrical characteristics(Tj=25°C) of the 1MBI200F-120 can be summarized as:(1):collect...
1MBI200F-120: DescriptionThe 1MBI200F-120 is a type of IGBT module(F series),features of the 1MBI200F-120 are:(1)variety of power capacity series;(2)low saturation voltage;(3)voltage drive. The absolute maximum ...
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Features: • NPT-Technology• Square SC SOA at 10 x IC• High Short Circuit Withsta...
DescriptionThe 1MBI1200UC-170 is a type of IGBT module. The absolute maximum ratings(Tc= 25°C) an...
Features: • Square RBSOA• Low Saturation Voltage• Overcurrent Limiting Function ...
The 1MBI200F-120 is a type of IGBT module(F series),features of the 1MBI200F-120 are:(1)variety of power capacity series;(2)low saturation voltage;(3)voltage drive.
The absolute maximum ratings and electrical characteristics(Tj=25°C) of the 1MBI200F-120 can be summarized as:(1):collector-emitter voltage is 1200 V;(2):gate -emitter voltage is±20 V;(3):collect current(continuous) is 200A,c ont inuous(1ms) is 400A;(4):max. power dissipation is 1440 W;(5):operating temperature is +150°C;(6):storage temp erature is-40 °C+125°C;(7):isolation voltage(AC 1min) is 2500 V;(8):net.weight is 415g.Electrical characteristics:(1):zero gate voltage collector current is 4.0mA max when VGE is 0V and VCE is 1200V and Tc is 25°C;(2):gate-emit ter leackage current is 400nA max when VCE is 0V and VGE is±20V;(3):collector-emitter saturation voltage is 2.5V max when VGE is 15V and IC is 200A;(4):diode forward on-voltage is 2.5 V max when IF is 200A and VGE is 0V;(5): reverse recovery time is 350ns max when IF is 200A,dt is 600A/us and VGE is -10V;(6)reverse transfer capacitance is 36000pF typ when f is 1MHz.
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