194MS8E

      Here is the description about 194MS8E of the GaAs MMIC SPDT SWITCH. The 194MS8E are low-cost SPDT switches in 8-lead MSOP packages for use in applications which require high isolation between two RF paths.  The devices can control signals from DC to 3 GHz and have been optimized to provide extremely high isolation with minimal insertion loss in medium and low power applications. On chip circuitry allows positive voltage control operation at very low DC currents with control inputs compatible with CMOS and most TTL logic families.    RF1 and RF2 are reflective opens when "OFF".
      Here are the features of 194MS8E: Ultra Small Package: MSOP8; High Isolation: 50 dB; Positive Control: 0/+3V to 0/+7V.
      Here are the absolute Maximum Ratings of 194MS8E(TA = 25). RF Input Power (Vctl= 0V/+5V) is +27 dBm. Control Voltage Range (A & B) is from -0.2 to +7.5 Vdc. Hot Switch Power Level (Vctl= 0V/+5V) is +24 dBm. Channel Temperature is 150 °C. Continuous Pdiss (T= 85 °C) (derate 5.5 mW/°C above 85 °C) is 360 mW. Thermal Resistance is 180 °C/W. Storage Temperature is from -65 to +150 °C. Operating Temperature is from -40 to +85 °C. ESD Sensitivity (HBM) is Class 1C.
      Here are the notes of 194MS8E: DC blocking capacitors are required at ports RFC, RF1 and RF2. Their value will determine the lowest transmission frequency. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 7 Volts applied to the CMOS logic gates. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. Highest RF signal power capability is achieved with Control set to 0/+7V.
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