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18N60

Features: * R DS(ON) 400m @VGS = 10 V* Ultra low gate charge ( typical 50nC )* Low reverse transfer capacitance ( CRSS = typical 23pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT ...

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18N60: Features: * R DS(ON) 400m @VGS = 10 V* Ultra low gate charge ( typical 50nC )* Low reverse transfer capacitance ( CRSS = typical 23pF )* Fast switching capability* Avalanche energy specified* Impro...

18N60 Data Sheet

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Part Number:
18N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

* R DS(ON) 400m @VGS = 10 V
* Ultra low gate charge ( typical 50nC )
* Low reverse transfer capacitance ( CRSS = typical 23pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


Specifications

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
18
A
Pulsed Drain Current
IDM
45
A
Avalanche Current
IAR
18
A
Avalanche Energy Single Pulsed
EAS
1000
mJ
Repetitive
EAR
30
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Power Dissipation
PD
360
W
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.


Description

The UTC 18N60 uses UTC's advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


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