16TTS.. SERIES

Features: SpecificationsDescription The 16TTS.. SERIES of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. Typical applications are in input rectification (soft start). these 16TTS.. SERIES are designed to be used with International...

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SeekIC No. : 004211096 Detail

16TTS.. SERIES: Features: SpecificationsDescription The 16TTS.. SERIES of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. Typical applications are ...

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16TTS.. SERIES
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Upload time: 2024/11/23

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Features:






Specifications






Description

      The 16TTS.. SERIES of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. Typical applications are in input rectification (soft start). these 16TTS.. SERIES are designed to be used with International Rectifier input diodes.
      In typical applications of 16TTS.. SERIES such as capacitive input filter TA = 55°C, TJ = 125°Cwith common heatsink of 1°C/W, Output Current of Single-phase Bridge is 13.5A, Output Current of Three-phase Bridge is 17A.
      In 16TTS08, the maximum peak reverse voltage(VRRM) is 800V as the same as the maximum peak direct voltage(VDRM). In 16TTS12, the maximum peak reverse voltage(VRRM) is 1200V as the same as the maximum peak direct voltage(VDRM).
      The absolute maximum ratings of 16TTS.. SERIES have been conduded as following. IT(AV) Max. Average On-state Current is 10A under the condition of 50% duty cycle @ TC = 98° C, sinusoidal wave form. IRMS Max. RMS On-state Current is 16A. ITSM Max. Peak One Cycle Non-Repetitive is 170A under the condition of 10ms Sine pulse, rated VRRMapplied . ITSM Surge Current is 200A under the condition of 10ms Sine pulse, no voltage reapplied. I2t Max. I2t for fusing is 144 A2s under the condition of 10ms Sine pulse, rated VRRMapplied. I2t Max. I2t for fusing is 200 A2s under the condition of 10ms Sine pulse, no voltage reapplied. I2t Max. I2t for fusing is 2000 A2s under the condition of t = 0.1 to 10ms, no voltage reapplied. VTM Max. On-state Voltage Drop is 1.4 V under the condition of @ 10A, TJ = 25°C. rt On-state slope resistance is 24.0 mW under the condition of TJ = 125°C. VT(TO) Threshold Voltage is 1.1 V under the condition of TJ = 125°C. IRM/IDM Max.Reverse and Direct is 0.5 mA under the condition of TJ = 25 °C and VR = rated VRRM/ VDRM. IRM/IDM Leakage Current is 5.0 mA under the condition of TJ = 125 °C and VR = rated VRRM/ VDRM. IH Max. Holding Current is 100 mA under the condition of Anode Supply = 6V, Resistive load, Initial IT=1A. IL Max. Latching Current is 200 mA under the condition of Anode Supply = 6V, Resistive load. dv/dt Max. rate of rise of off-state Voltage is 500 V/s. di/dt Max. rate of rise of turned-on Current is 150 A/s.






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