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16CTT100

Features: • 175 high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Increased ruggedness for reverse avalanche capability• RBSOA available• Negligible switching ...

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SeekIC No. : 004211044 Detail

16CTT100: Features: • 175 high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Incre...

16CTT100 Data Sheet

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Part Number:
16CTT100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 175 high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level




Application

• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems




Specifications

PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current		 per leg IF(AV) 50 % duty cycle at TC = 163 , rectangular waveform
8
A
per device
16
Maximum peak one cycle
non-repetitive surge current per leg		 IFSM 5 s sine or 3 s rect. pulse Following any rated
load condition and with
rated VRRM applied
850
10 ms sine or 6 ms rect. pulse
210
Non-repetitive avalanche energy EAS TJ = 25 , IAS = 1.5 A, L =60 mH
67
mJ
Repetitive avalanche current IAR Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
IAS at
TJ max.
A





Description

High Performance Schottky Generation 5.0 16CTT100, 2 x 8 A




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