16CTQ100PBF

Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Reverse Recovery Time (trr): -
Current - Average Rectified (Io) (per Diode): 8A
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Current - Reverse Leakage @ Vr: 550µA @ 100V


Features:

• 175 TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free ("PbF" suffix)
• Designed and qualified for industrial level


Specifications

PARAMETER		SYMBOL	TEST CONDITIONS		VALUES	UNITS
Maximum average forward current See fig. 5	per leg	IF(AV)	50 % duty cycle at TC = 148 , rectangular waveform		8	A
	per device				16
Maximum peak one cycle A non-repetitive surge current See fig. 7		IFSM	5 s sine or 3 s rect. pulse	Following any rated load condition and with rated VRRM applied	850
			10 ms sine or 6 ms rect. pulse		275
Non-repetitive avalanche energy		EAS	TJ = 25 , IAS = 5.5 A, L = 1 mH		7.50	mJ
Repetitive avalanche current		IAR	Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5* VR typical		0.50	A

Description

This 16CTQ100PbF center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. Typical applications of 16CTQ100PbF are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.