Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Reverse Recovery Time (trr): -
Current - Average Rectified (Io) (per Diode): 8A
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Voltage - DC Reverse (Vr) (Max): 80V
Current - Reverse Leakage @ Vr: 550µA @ 80V
Features: • 175 TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free ("PbF" suffix)
• Designed and qualified for industrial levelSpecifications
| PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
Maximum average forward current
See fig. 5 |
per leg |
IF(AV) |
50 % duty cycle at TC = 148 , rectangular waveform |
8 |
A |
| per device |
16 |
Maximum peak one cycle A
non-repetitive surge current
See fig. 7 |
IFSM |
5 s sine or 3 s rect. pulse |
Following any rated
load condition and with
rated VRRM applied |
850 |
| 10 ms sine or 6 ms rect. pulse |
275 |
| Non-repetitive avalanche energy |
EAS |
TJ = 25 , IAS = 5.5 A, L = 1 mH |
7.50 |
mJ |
| Repetitive avalanche current |
IAR |
Current decaying linearly to zero in 1 s
Frequency limited by TJ maximum VA = 1.5* VR typical |
0.50 |
A |
DescriptionThis 16CTQ080PbF center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. Typical applications of 16CTQ080PbF are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
16CTQ080PBF Data Sheet
