Features: • 175 TJ operation• Center tap configuration• Low forward voltage drop• High frequency operation• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance• Guard ring for enhanced ruggedness and long te...
16CTQ080GSPbF: Features: • 175 TJ operation• Center tap configuration• Low forward voltage drop• High frequency operation• High purity, high temperature epoxy encapsulation for enhanc...
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS | ||
Maximum average forward current See fig. 5 |
per leg |
IF(AV) |
50 % duty cycle at TC = 148, rectangular waveform |
8 |
A | |
per device |
16 | |||||
Maximum peak one cycle non-repetitive surge current per leg See fig. 7 |
IFSM |
5 µs sine or 3 µs rect. pulse | Following any rated load condition and with rated VRRM applied |
650 |
A | |
10 ms sine or 6 ms rect. pulse |
210 | |||||
Non-repetitive avalanche energy per leg |
EAS |
TJ = 25, IAS = 0.50 A, L = 60 mH |
7.50 |
mJ | ||
Repetitive avalanche current per leg |
IAR |
Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical |
0.50 |
A |
This 16CTQ080GSPbF center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. Typical applications of 16CTQ080GSPbF are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.