1629T16RDM10IT-DT

The 1629T16RDM10IT-DT is one member of the SG1629 family which designed as the monolithic integrated circuits that designed to generate the positive and negative base drive currents (ib1 and ib2) required for high-speed, high power switching transistors. These 1629T16RDM10IT-DT are intended to interface between the secondary of a drive transformaner and the base of an NPN switching device. Positive drive current can be made constant with an external programming resistor, or can be clamped with a diode to keep the switching device out of saturation.

Fatures of the 1629T16RDM10IT-DT are:(1)self-generating positive and negative currents;(2)constant source current to one amp;(3)two amp peak sink curr-ent to negative voltage;(4)floating operation;(5)baker clamp input for non-saturated switching;(6)provisions for source and sink gating;(7)100 ns response.

The absolute maximum ratings of the 1629T16RDM10IT-DT can be summarized as:(1)input voltage (+Vin or -Vin):20 V;(2)collector to emitter voltage, source or sink:20 V;(3)source current:2.0 A;(4)sink current:3.0 A;(5)sink rectifier current (peak):2.0 A;(6)operating junction temperature hermetic (T,R packages): 150;(7)storage temperature range:-65 to +150;(8)lead temperature (soldering, 10 seconds):300. If you want to know more information such as the electrical characteristics about the 1629T16RDM10IT-DT,please download the datasheet in www.seekic.com or www.chinaicmart.com .