1617-35

SpecificationsABSOLUTE MAXIMUM RATINGSMaximum Power DissipationDevice Dissipation @25°C 290 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)50VEmitter to Base Voltage (BVebo) 3.0 VCollector Current (Ic) 6AMaximum TemperaturesStorage Temperature -65 to +200 °COperating Junction Tempera...

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1617-35 Picture
SeekIC No. : 004210868 Detail

1617-35: SpecificationsABSOLUTE MAXIMUM RATINGSMaximum Power DissipationDevice Dissipation @25°C 290 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)50VEmitter to Base Voltage (BVebo) 3.0 VColle...

floor Price/Ceiling Price

Part Number:
1617-35
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C                                         290 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)                                 50V
Emitter to Base Voltage (BVebo)                                 3.0 V
Collector Current (Ic)                                                       6A
Maximum Temperatures
Storage Temperature                                   -65 to +200 °C
Operating Junction Temperature                             +200 °C



Description

GENERAL DESCRIPTION
     The 1617-35 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1540 1660 MHz. The 1617-35 transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. Low thermal resistance Solder Sealed Package reduces junction temperature, extends life.




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