Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation• Low drain to tab capacitance(<50pF)• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductiv...
15N80Q: Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation• Low drain to tab capacitance(<50pF)• ...
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