Features: Compact, Low Cost Design20.0 dB Small Signal Gain+27.0 dBm Saturated Output Power100% On-Wafer RF, DC and Output Power Testing100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +9.0 VDC Supply Current (Id) 500 mA Gate Bias Voltage (Vg) +0.3 ...
15MPA0566: Features: Compact, Low Cost Design20.0 dB Small Signal Gain+27.0 dBm Saturated Output Power100% On-Wafer RF, DC and Output Power Testing100% Visual Inspection to MIL-STD-883 Method 2010Specification...
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Supply Voltage (Vd) | +9.0 VDC |
Supply Current (Id) | 500 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +17.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | 55 to MTTF Table1 |
Channel Temperature (Tch) | MTTF Table1 |
The 15MPA0566 Mimix Broadband's two stage 11.0-19.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +27.0 dBm saturated output power. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The 15MPA0566 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This 15MPA0566 is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.