150N3

The 150N3 is short for BSO150N03 which is designed as optiMOS2 power transistor.

The 150N3 has nine features. The first one is it would have fast switching MOSFET for SMPS. The second one is the 150N3 would have optimized technology for notebook DC/DC. The third one is qualified according to JEDEC for target applications. The fourth one is the 150N3 would be dual N-channel. The fifth one is logic level. The sixth one is it would have excellent gate charge x Rds(on) product (FOM). The seventh one is it would have very low on-resistance Rds(on). The eighth one is the 150N3 would be avalanche rated. The ninth one is it would be dv/dt rated. That are all the main features above.

Some absolute maximum ratings of the 150N3 have been concluded into several points as follow. Its countinuous drain current would be 9.1A for 10 secs and would be 7.6A for steady state at Ta=25°C and at Ta=70°C the 150N3would be 7.3A for 10 secs and would be 6.1A for steady state. Its pulsed drain current would be 36A. The avalanche energy, single pulse of the 150N3 would be 82mJ with condition of Id=9.1A and Rgs=25. Its gate source voltage would be +/-20V. The power dissipation of the 150N3 would be 2.0W for 10 secs and would be 1.4W for steady state. Its operating and storage temperature range would be from -55°C to 150°C. The last one is about its IEC climatic category; DIN IEC 68-1 which would be 55/150/56.

Also some electrical characteristics about the 150N3. Its drain to source breakdown voltage would be min 30V with condition of Vgs=0V and Id=1mA. The gate threshold voltage of the 150N3 would be min 1.2V and typ 1.6V and max 2V with condition of Vds=Vgs, Id=25uA. Its zero gate voltage drain current would be typ 0.1uA and max 1uA with condition of Vds=30V, Vgs=0V and Tj=25°C and if Tj=125°C the 150N3 would be typ 10uA and max 100uA. And so on. If you have any question or suggestion or want to know more information about the 150N3 please contact us for details. Thank you!