Features: ·Integrated Mixer, LO Buffer and Output Amplifier·8 dB Conversion Gain·15 dB Image Rejection·+17 dBm OIP3·+6 dBm LO Drive Level·-12 dBm LO Leakage Power·100% On-Wafer RF and DC Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC S...
14TX0614: Features: ·Integrated Mixer, LO Buffer and Output Amplifier·8 dB Conversion Gain·15 dB Image Rejection·+17 dBm OIP3·+6 dBm LO Drive Level·-12 dBm LO Leakage Power·100% On-Wafer RF and DC Testing·100...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id1,2,3) | 250,150,250 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (IF Pin) | 0.0 dBm |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table1 |
Channel Temperature (Tch) | MTTF Table1 |
Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter 14TX0614 provides +17 dBm output third order intercept and 15 dB image rejection across the band. 14TX0614 is an image reject, balanced mixer followed by a two stage output amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. 14TX0614 uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. 14TX0614 is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.