Features: On-Chip Prescaler+6.0 dBm Output Power-88 dBc/Hz @ 100KHz Phase Noise-40 dBc Harmonic Suppression110mA @ 4.0V Bias Supply100% On-Wafer, DC and Output Power Testing100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vcc1,2,3) +5.0 VDC Supply Voltage (V...
14OSC0501: Features: On-Chip Prescaler+6.0 dBm Output Power-88 dBc/Hz @ 100KHz Phase Noise-40 dBc Harmonic Suppression110mA @ 4.0V Bias Supply100% On-Wafer, DC and Output Power Testing100% Visual Inspection to...
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Supply Voltage (Vcc1,2,3) | +5.0 VDC |
Supply Voltage (Vtune) | +7.0 VDC |
Supply Current (Icc1,2,3) | 150 mA |
Supply Current (Itune) | 1 mA |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | 55 to MTTF Table1 |
Junction Temperature (Tjn) | MTTF Table1 |
(1) Junction temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 14.2-15.2 GHz GaAs HBT VCO 14OSC0501 is a fully integrated oscillator MMIC with on-chip frequency doubler and divide-by-8 prescaler (w.r.t RFout). This design is based on a cross coupled differential pair with on-chip tuning diode and resonator. The use of a high-Q resonator structure and integrated varactor diodes results in optimum phase-noise performance, whilst the integration of frequency doubler and prescaler reduce application complexity and time-to-market.
The 14OSC0501 uses Mimix Broadband's 2 um GaAs HBT device model technology to ensure low flicker (1/f ) noise and high reliability. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.