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13PD100-F

Features: Planar StructureDielectric Passivation100% Purge Burn-InHigh ResponsivitySpecificationsReverse Voltage 30 VoltsForward Current 5 mAReverse Current 500 mAOperating Temperature -40 to + 85Storage Temperature -40 to + 85Soldering Temperature 250DescriptionThe 13PD100-F is an InGaAs photodio...

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13PD100-F: Features: Planar StructureDielectric Passivation100% Purge Burn-InHigh ResponsivitySpecificationsReverse Voltage 30 VoltsForward Current 5 mAReverse Current 500 mAOperating Temperature -40 to + 85St...

13PD100-F Data Sheet

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Part Number:
13PD100-F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity


Specifications

Reverse Voltage                       30 Volts
Forward Current                      5 mA
Reverse Current                      500 mA
Operating Temperature          -40 to + 85
Storage Temperature             -40 to + 85
Soldering Temperature           250


Description

The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customersupplied fiber in single or multi-mode versions. The 13PD100-F offers streamlined design and strain-relief for the fiber. Planar semiconductor design and dielectric passivation provide superior noise performance. Reliability is assured by hermetic sealing and a 100% purge burn-in (200oC, 15 hours, Vr = 15V). A low backreflection (-LBR) option is available.




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