DescriptionThe 13007BD is one member of the ST13007DFP family which designed as the high voltage fast-switching NPN power transistor. It is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. Also this device can be used in up to...
13007BD: DescriptionThe 13007BD is one member of the ST13007DFP family which designed as the high voltage fast-switching NPN power transistor. It is manufactured using high voltage Multi Epitaxial Planar tec...
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The 13007BD is one member of the ST13007DFP family which designed as the high voltage fast-switching NPN power transistor. It is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. Also this device can be used in up to 120W electronic transformers for halogen lamps and switch mode power supplies.
Features of the 13007BD are:(1)improved specification:; (2)lower leakage current; (3)tighter gain range; (4)DC current gain preselection; (5)tighter storage time range; (6)high voltage capability; (7)integrated free-wheeling diode; (8)low spread of dynamic parameters; (9)minimum lot-to-lot spread for reliable operation; (10)very high switching speed; (11)fully characterized at 125 ; (12)large rbsoa; (13)fully insulated package (U.L. compliant) for easy mounting.
The absolute maximum ratings of the 13007BD can be summarized as:(1)collector-emitter voltage (VBE=-1.5V):700 V;(2)collector-emitter voltage (IB=0):400 V;(3)emitter-base voltage (Ic=0):9 V;(4)collector current:8 A;(5)collector peak current:16 A;(6)base current:4 A;(7)base peak current:8 A;(8)total dissipation at Tc</=25 :36 W;(9)insulation withstand voltage (RMS) from all three leads to external heatsink:1500 V;(10)storage temperature:-65 to 150 ;(11)max. operating junction temperature:150 . If you want to know more information such as the electrical characteristics about the 13007BD, please download the datasheet in www.seekic.com or www.chinaicmart.com .