DescriptionThe 13005D is one member of the TE13005D family which designed as the Silicon NPN high voltage switching transistor. It can be used in electronic lamp ballast circuits and switch-mode power supplies. Features of the TE13005D are:(1)monolithic integrated C-E-free-wheel diode ; (2)high sp...
13005D: DescriptionThe 13005D is one member of the TE13005D family which designed as the Silicon NPN high voltage switching transistor. It can be used in electronic lamp ballast circuits and switch-mode pow...
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The 13005D is one member of the TE13005D family which designed as the Silicon NPN high voltage switching transistor. It can be used in electronic lamp ballast circuits and switch-mode power supplies. Features of the TE13005D are:(1)monolithic integrated C-E-free-wheel diode ; (2)high speed technology; (3)planar passivation; (4)very short switching times; (5)very low switching losses; (6)very low dynamic saturation; (7)very low operating temperature; (8)high reverse voltage.
The electrical characteristics of the TE13005D can be summarized as:(1)emitter-base breakdown voltage:9 V;(2)collector-emitter saturation voltage:0.5 V;(3)base-emitter saturation voltage:1.6 V;(4)reverse recovery current:4 A;(5)turn-on transient peak voltage:4 V;(6)forward voltage:1.2 V;(7)gain bandwidth product:4 MHz.
The absolute maximum ratings of the TE13005D can be summarized as:(1)collector-emitter voltage:400 V;(2)emitter-base voltage:9 V;(3)collector current:6 A;(4)collector peak current:8 A;(5)base current:2 A;(6)base peak current:4 A;(7)total power dissipation:57 W;(8)junction temperature:150 ;(9)storage temperature range:-65 to +150 . If you want to know more information such as the electrical characteristics about the TE13005D, please download the datasheet in www.seekic.com or www.chinaicmart.com .