13003GDL

The 13003GDL is one member of the MJE13003 family which is designed as the NPN Silicon power transistor that can be used in 115 and 220 V switchmode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and Deflection circuits. Features of the 13003GDL are:(1)Pb-free package is available;(2)SOA and switching applications information;(3)700 V blocking capability;(4)inductive switching Matrix 0.5 to 1.5 A, 25 and 100 tc @ 1 A, 100 is 290 ns (typ);(5)reverse biased SOA with inductive loads @ Tc=100.

The absolute maximum ratings of the 13003GDL can be summarized as:(1)collector-emitter voltage VCEO(sus):400 Vdc;(2)collector-emitter voltage VCEV:700 Vdc;(3)emitter base voltage:9 Vdc;(4)collector current-continuous:1.5 Adc;(5)collector current-peak:3 Adc;(6)base current-continuous:0.75 Adc;(7)base current-peak:1.5 Adc;(8)emitter current-continuous:2.25 Adc;(9)emitter current-peak:4.5 Adc;(10)total power dissipation @ Tc=25:1.4 W;(11)total power dissipation derate above 25:11.2 mW/;(12)operating and storage junction temperature range:-65 to +150. If you want to know more information such as the electrical characteristics about the 13003GDL, please download the datasheet in www.seekic.com or www.chinaicmart.com.