13003FD

The 13003FD belongs to the CDT13003 family which designed as the NPN silicon power transistor that is produced by the Continental Device India Limited. It can be used in suitable for lighting, switching regulator and motor control.

The absolute maximum ratings of the 13003FD can be summarized as:(1)collector base voltage:600 V;(2)collector emitter (sus) voltage:400 V;(3)emitter base voltage:9.0 V;(4)operating and storage junction temperature range:-65 to+150;(5)power dissipation @ Tc=25 ºC / derate above 25ºC:50 W and 480 mW/;(6)power dissipation @ Ta=25 ºC / derate above 25ºC:1.4 W and 11.2 mW/;(7)junction to case:2.08ºC/W;(8)junction to ambient:89ºC/W;(9)maxim-um lead temperature for soldering purpose: 1/8" from case for 5 seconds:275.

The electrical characteristics of the 13003FD can be summarized as:(1)collector base voltage:600 V;(2)collector emitter (sus) voltage:400 V;(3)collector cut off current (VCB=600V, IE=0):1.0 mA;(4)collector cut off current (VCB=600V, IE=0, Tc=100ºC):5.0 mA;(5)emitter cut off current:1.0 mA;(6)DC current gain (Ic=0.5 A, VCE=5V):8 to 40;(7)fall time:0.7 us;(8)storage time:4.0 us;(9)turn on time:1.1 us. If you want to know more information such as the electrical characteristics about the 13003FD, please download the datasheet in www.seekic.com or www.chinaicmart.com.