13003ED

The 13003ED is one member of the KSE13003 family which designed as the NPN silicon transistor with three points of features:(1)suitable for switching regul-ator and motor control;(2)high speed switching;(3)high voltage capability.

The absolute maximum ratings of the can be 13003ED summarized as:(1)collector-base voltage:700 V;(2)collector-emitter voltage:400 V;(3)emitter-base voltage:9 V;(4)collector current (DC):1.5 A;(5)collector current (pulse):3 A;(6)base current:0.75 A;(7)collector dissipation (Tc=25°C):20 W;(8)junction temperature:150 °C;(9)storage temperature range:-65 to 150 °C. Notes:1) these ratings are based on a maximum junction temperature of 150°C. 2) these are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

And the electrical characteristics Tc=25°C unless otherwise noted of the 13003ED can be summarized as:(1)collector-emitter breakdown voltage:400 V;(2)emitter cut-off current:10 uA;(3)fall time:0.7 ms;(4)storage time:4.0 ms;(5)turn on time:1.1 ms;(6)current gain bandwidth product:4 MHz;(7)output capacitance:21 pF. If you want to know more information such as the electrical characteristics about the 13003ED, please download the datasheet in www.seekic.com or www.chinaicmart.com.