13003D

The 13003D is one member of the ST13003D-K family which is designed as the high voltage fast-switching NPN power transistor. This device can be used in electronic ballast for fluorescent lighting. Also it is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. Features of the ST13003D-K are:(1)integrated antiparallel collector-emitter diode;(2)minimum lot-to-lot spread for reliable operation;(3)very high switching speed;(4)low spread of dynamic parameters;(5)high voltage capability.

The absolute maximum ratings of the ST13003D-K can be summarized as:(1)collector-emitter voltage (VBE=0):700 V;(2)collector-emitter voltage (IB=0):400 V;(3)emitter-base voltage (Ic=0, IB=0.75A, tp<10s):V(BR)EBO V;(4)collector current:1.5 A;(5)collector peak current (tP < 5ms):3 A;(6)base current:0.75 A;(7)base peak current (tP < 5ms):1.5 A;(8)total dissipation at Tc=25°C:40 W;(9)storage temperature:-55 to 150 °C;(10)max. operating junction temperature: 150 °C.

The electrical characteristics of the ST13003D-K can be summarized as:(1)collector cut-off current (VBE=-1.5V, VCE=700V):1 mA;(2)collector cut-off current (VBE=-1.5V, VCE=700V, Tc=125°C):5 mA;(3)emitter-base breakdown voltage (Ic=0):9 to 18 V;(4)collector-emitter sustaining voltage:400 V;(5)diode forward voltage:1.5 V;(6)DC current gain (Ic=0.5A VCE=2V):8 to 20. If you want to know more information such as the electrical characteristics about the ST13003D-K, please download the datasheet in www.seekic.com or www.chinaicmart.com.