13003BD

The 13003BD is one member of the TS13003B family which designed as the high voltage NPN transistor. It has two points of features:high voltage and high speed switching. The absolute maximum ratings of the TS13003B can be summarized as:(1)collector-base voltage:700 V;(2)collector-emitter voltage:400 V;(3)emitter-base voltage:9 V;(4)collector current (DC):1.5 A;(5)collector current (pulse):3 A;(6)collector power dissipation TO-92:0.6 W;(7)collector power dissipation TO-126:20 W;(8)operating junction temperature:+150;(9)operating junction and storage temperature range:-55 to +150.

The electrical characteristics of the 13003BD can be summarized as:(1)collector-base voltage:700 V;(2)collector-emitter breakdown voltage:400 V;(3)emitter-base breakdown voltage:9 V;(4)collector cutoff current:1 uA;(5)emitter cutoff current:0.1 uA;(6)collector-emitter saturation voltage (Ic/IB=1.5A/0.5 A):0.5 V;(7)collector-emitter saturation voltage (Ic/IB=0.5A/0.1A):0.2 V;(8)DC current gain:8 to 40;(9)frequency:4 MHz;(10)output capacitance:21 pF;(11)turn on time:1.1 uS;(12)storage time:2 uS;(13)fall time:0.2 uS. If you want to know more information such as the electrical characteristics about the 13003BD, please download the datasheet in www.seekic.com or www.chinaicmart.com.