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12P10

Features: * RDS(ON) = 0.29Ω @VGS = -10 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specifiedSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID -...

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SeekIC No. : 004209159 Detail

12P10: Features: * RDS(ON) = 0.29Ω @VGS = -10 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specifiedSpecifications Parameter Symbol Ratings Unit Drain-S...

12P10 Data Sheet

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Part Number:
12P10
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

* RDS(ON) = 0.29Ω @VGS = -10 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified


Specifications

Parameter Symbol Ratings Unit
Drain-Source Voltage VDSS -100 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current ID -9.4 A
Pulsed Drain Current (Note 2) IDM -37.6 A
Avalanche Current (Note 2) IAR -9.4 A
Single Pulsed Avalanche Energy (Note 3) EAS 370 mJ
Repetitive Avalanche Energy (Note 2) EAE 5.0 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt -6.0 V/ns
Power Dissipation PD 50 W
Derate above 25 0.4 W/
Junction Temperature Tj +150
Storage Temperature Tstg -55 to +150
Note:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX)
L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25
ISD-11.5A, di/dt300A/ s, VDDBVDSS, Starting TJ=25


Description

The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.




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