123NQ100

Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 100V
Reverse Recovery Time (trr): -
Diode Type: Schottky
Current - Average Rectified (Io) (per Diode): 120A
Packaging: Bulk
Diode Configuration: Single
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
Current - Reverse Leakage @ Vr: 3mA @ 100V


Description

The 123NQ100 is designed as one member of the 123NQ...(R) series. These series is high current schottky rectifier module which have been optimized for low reverse leakage at high temperature. It use the proprietary barrier technology that allows for reliable operation up to 175°C junction temperature. Typical applications include switching power supplies, converters, free-wheeling diodes, and reverse battery protection.

The 123NQ100 has eight features. First of all, 123NQ100 could have max 175°C operation. Then the second one is it would have unique high power and half-pak module. The third one is it replaces two parallel DO-5's. Thr fourth one is it would be easier to mount and lower profile than DO-5's. The fifth one is it has high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance. And the sixth one is it would have low forward voltage drop. The seventh one is it would have high frequency operation. The last one is guard ring for enhanced ruggedness and long term reliability. That are all the main features above.

Some absolute maximum ratings of 123NQ100 have been concluded into several points as follow. Its max DC reverse voltage is 100V and its max working peak reverse voltage would be also be 100V. Then its max average forward current would be 120A with condition of 50% duty cycle at Tc= 121°C, rectangular wave form. Its max peak one cycle non-repetitive surge current would be 16000A with condition of 5s sine or 3s rect. pulse and it would be 2100A with condition of 10ms sine or 6ms rect. pulse. Its non-repetitive avalanche energy would be 15mJ with condition of Tj=25°C, Ias=1A and L=30mH. Its repetitive avalanche current would be 1A with conditions of current decaying linearly to zero in 1sec and frequency limited by TJ max. Va=1.5Vr typical. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!