122NQ030

Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): -
Diode Type: Schottky
Current - Average Rectified (Io) (per Diode): 120A
Packaging: Bulk
Diode Configuration: Single
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Current - Reverse Leakage @ Vr: 10mA @ 30V
Voltage - DC Reverse (Vr) (Max): 30V
Voltage - Forward (Vf) (Max) @ If: 490mV @ 120A


Features:

150° C TJ operation
Unique high power, Half-Pak module
Replaces two parallel DO-5's
Easier to mount and lower profile than DO-5's
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability


Specifications

Parameters	122NQ	Units	Conditions
IF(AV) Max. Average Forward Current* See Fig. 5	120	A	50% duty cycle @ TC = 110° C, rectangular wave form
IFSM Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 7	22,500	A	5µs Sine or 3µs Rect. pulse	Following any rated load condition and with rated VRRM applied
	2400		10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy	54	mJ	TJ = 25 °C, IAS = 12 Amps, L = 0.75 mH
IAR Repetitive Avalanche Current	12	A	Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typica

Description

The 122NQ030 (R) high current Schottky rectifier module has been optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature.  Typical applica-
tions are in switching power supplies, converters, free-wheeling