1214370M Selling Leads, Price trend, 1214370M DataSheet download, circuit diagram from SeekIC.com

SpecificationsMaximum Power Dissipation @ ..251 600 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage .... 75 VoltsBVebo Emitter to Base Voltage......3.0 VoltsIc Collector Current ............25 AmpsMaximum TemperaturesStorage Temperature ........- 65 to + 200Operating Junction Te...

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SeekIC No. : 004208555 Detail

1214370M: SpecificationsMaximum Power Dissipation @ ..251 600 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage .... 75 VoltsBVebo Emitter to Base Voltage......3.0 VoltsIc Collector Current ....

1214370M Data Sheet

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Part Number:: 1214370M
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/12/25

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Product Details

Description

Specifications

Maximum Power Dissipation @ ..251 600 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage .... 75 Volts
BVebo Emitter to Base Voltage...... 3.0 Volts
Ic Collector Current ............25 Amps
Maximum Temperatures
Storage Temperature ........- 65 to + 200
Operating Junction Temperature ......+ 200

Description

The 1214370M is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. The 1214370M is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.

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1214370M

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