1214-32L

SpecificationsMaximum Power DissipationDevice Dissipation @ 25°C1........... 125 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) ........50 VEmitter to Base Voltage (BVebo) ........3.5 VCollector Current (Ic)............... 5 AMaximum TemperaturesStorage Temperature........ -65 to +2...

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SeekIC No. : 004208554 Detail

1214-32L: SpecificationsMaximum Power DissipationDevice Dissipation @ 25°C1........... 125 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) ........50 VEmitter to Base Voltage (BVebo) ........3.5...

floor Price/Ceiling Price

Part Number:
1214-32L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Specifications

Maximum Power Dissipation
Device Dissipation @ 25°C1........... 125 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) ........50 V
Emitter to Base Voltage (BVebo) ........3.5 V
Collector Current (Ic)............... 5 A
Maximum Temperatures
Storage Temperature........ -65 to +200 °C
Operating Junction Temperature ......+200 °C



Description

The 1214-32L is an internally matched, COMMON BASE transistor capable ofproviding 32 Watts of pulsed RF output power at 5 milliseconds pulse width,20% duty factor across the band 1200 to 1400 MHz. The 1214-32L is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.




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