110CNQ045APBF

Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Reverse Recovery Time (trr): -
Voltage - DC Reverse (Vr) (Max): 45V
Mounting Type: Chassis Mount
Package / Case: D-61-8
Supplier Device Package: D-61-8
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 55A
Current - Reverse Leakage @ Vr: 3mA @ 45V
Voltage - Forward (Vf) (Max) @ If: 540mV @ 55A


Features:

`150 T<sub>J</sub> operation
`Center tap module
`Very low forward voltage drop
`High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
`High frequency operation
`Guard ring for enhanced ruggedness and long term reliability
`Low profile, small footprint, high current package
`New fully transfer-mold low profile, small footprint, high current package
`Through-hole versions are currently available for use in
`Lead-Free applications ("PbF" suffix)


Specifications

Parameters	112CNQ	Units	Conditions
IF(AV) Max. Average Forward Per Leg Current * See Fig. 5 Per Device	55	A	50% duty cycle @ TC = 125, rectangular wave form
	110
IFSM Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7	5400	A	5µs Sine or 3µs Rect. pulse	Following any rated load condition and with Arated VRRM applied
	800		10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy (Per Leg)	54	mJ	TJ = 25, IAS = 8 Amps, L = 1.12 mH
IAR Repetitive Avalanche Current(Per Leg)	8	A	Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical

Description

The 110CNQ045APbF has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.