10TQ035PBF

Series: -
Manufacturer: Vishay Semiconductors
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Through Hole
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Diode Type: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 35V
Package / Case: TO-220-2 Fused Center, TO-220AC
Voltage - Forward (Vf) (Max) @ If: 760mV @ 10A
Current - Reverse Leakage @ Vr: 6mA @ 35V


Features:

• 175 TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free ("PbF" suffix)
• Designed and qualified for industrial level


Specifications

PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
Maximum average forward current See fig. 5	IF(AV)	50 % duty cycle at TC = 151 , rectangular waveform		10	A
Maximum peak one cycle non-repetitive surge current See fig. 7	IFSM	5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse	Following any rated load condition and with rated VRRM applied	1050
				280
Non-repetitive avalanche energy	EAS	TJ = 25 , IAS =2 A, L =6.5 H		13	mJ
Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical		2	A

Description

The 10TQ...PbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. Typical applications of 10TQ...PbF are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.