10SQ030

Features: ·Metal of silicon rectifier , majority carrier conduction·Guard ring for transient protection·Low power loss,high efficiency·High current capability,low VF·High surge capacity·Plastic package has UL flammability classification 94V-0·For use in low voltage,high frequency inverters,free wh...

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10SQ030 Picture
SeekIC No. : 004207956 Detail

10SQ030: Features: ·Metal of silicon rectifier , majority carrier conduction·Guard ring for transient protection·Low power loss,high efficiency·High current capability,low VF·High surge capacity·Plastic pack...

floor Price/Ceiling Price

Part Number:
10SQ030
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

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Product Details

Description



Features:

·Metal of silicon rectifier , majority carrier conduction
·Guard ring for transient protection
·Low power loss,high efficiency
·High current capability,low VF
·High surge capacity
·Plastic package has UL flammability classification 94V-0
·For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications



Specifications

Characteristic
SYMBOL
10SQ030
10SQ035
10SQ040
10SQ045
10SQ050
10SQ060
10SQ080
10SQ100
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
30
35
40
45
50
60
80
100
V
Maximum RMS Voltage
VRMS
21
24.5
28
31.5
35
42
56
70
V
Maximum DC Blocking Voltage
VDC
30
35
40
45
50
60
80
100
V
Maximum Average Forward
Rectified Current@Tc=95
I(AV)
10
A
Peak Forward Surage Current 8.3ms single half
sine-wave super imposed on rated load(JEDECMethod)
IFSM
275
A
Peak Forward Voltage at 10A DC(Note1)
VF
0.55
0.7
0.8
V
Maximum DC Reverse Current @Tj=25
at Rated DC Bolcking Voltage @Tj=100
IR
0.5
50
mA
Tyical Junction Capacitance (Note2)
CJ
450
PF
Tyical Thermal Resistance (Note3)
RJC
3.0
/w
Operating Temperature Range
TJ
-55 to+150
Storage Temperature Range
TSTG
-55 to+150
NOTES:1.300us Pulse Width, 2%Dudy Cycle
            2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
            3.Thermal Resistance Junction to Case.


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