DIODE STD 1200V 10A TO220AC
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Series: | - | Manufacturer: | Vishay Semiconductors | ||
Diode Type: | Standard | Voltage - DC Reverse (Vr) (Max): | 1200V (1.2kV) | ||
Current - Average Rectified (Io): | 10A | Current - Average Rectified (Io) (per Diode): | - | ||
Gate-Source Breakdown Voltage : | 30 V | Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 10A | ||
Speed: | Standard Recovery >500ns, > 200mA (Io) | Reverse Recovery Time (trr): | - | ||
Current - Reverse Leakage @ Vr: | 50µA @ 1200V | Capacitance @ Vr, F: | - | ||
Diode Configuration: | - | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-2 Full Pack | Supplier Device Package: | TO-220ACFP |
Parameters |
Value |
Unit |
Conditions |
IF(AV) Max. Average Forward Current |
10 |
A |
@ TC = 105, 180°conduction half sine wave |
IFSM Max. Peak One Cycle Non-Repetitive Surge Current |
170 |
A |
10ms Sine pulse, rated VRRM applied |
200 |
10ms Sine pulse, no voltage reapplied | ||
I2t Max. I2t for fusing |
130 |
A2s |
10ms Sine pulse, rated VRRM applied |
145 |
10ms Sine pulse, no voltage reapplied | ||
I2t Max. I2t for fusing |
1450 |
A2s |
t = 0.1 to 10ms, no voltage reapplied |
The 10ETS12FPPbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 junction temperature.
Typical applications of 10ETS12FPPbF are in input rectification and these products are designed to be used with International Rectifier Switches and Output Rectifiers which are available in identical package outlines. Fully isolated package (VINS = 2500 VRMS). UL E78996 approved