Specifications Maximum Power Dissipation @ 25 25 Watts Maximum Voltage and Current BVcesBVeboIc Collector to Emitter VoltageEmitter to Base VoltageCollector Current 50 Volts3.5 Volts3.0 Amps Maximum Temperatures Storage TemperatureOperating Junction Temperature - 65 to + 150+ ...
10AM05: Specifications Maximum Power Dissipation @ 25 25 Watts Maximum Voltage and Current BVcesBVeboIc Collector to Emitter VoltageEmitter to Base VoltageCollector Current 50 Volts3.5 Volts3....
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Maximum Power Dissipation @ 25 | 25 Watts | |
Maximum Voltage and Current | ||
BVces BVebo Ic |
Collector to Emitter Voltage Emitter to Base Voltage Collector Current |
50 Volts 3.5 Volts 3.0 Amps |
Maximum Temperatures | ||
Storage Temperature Operating Junction Temperature |
- 65 to + 150 + 200 |
The 10AM05 is a COMMON EMITTER transistor capable of providing 5 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness.