SpecificationsMaximum Power Dissipation @25 6 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 750 mAMaximum TemperaturesStorage Temperature - 65 to + 150 Operating Junction Temperature + 200DescriptionThe 10A015...
10A015: SpecificationsMaximum Power Dissipation @25 6 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 750 mAMaximum Temp...
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The 10A015 is a COMMON EMITTER transistor capable of providing 1.5 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness.